Mitsubishi - Power Modules

Your source for high power semiconductors, simply available at Huijzer Components.

Depending on your demand MITSUBISHI produces a wide range of high power semiconductors, such as;

The main advantage of SiC Power Modules is their reduced power-loss

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

But MITSUBISHI also delivers general rectifying diode modules that rectify commercial frequencies and high frequency diode modules for freewheel diodes in inverter circuits and for high-speed switching on a surge voltage absorbing circuit (snubber). The main switching devices of an inverter have changed from bipolar transistors to high-speed MOS gate devices, such as IGBT. The requirements of radio noise regulations have also increased the importance of not just reverse recovery characteristics, but also software recovery characteristics.

So whatever your challenge is, please feel free to contact us to create the best possible solution.